CSD86356Q5DT
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likeCSD86356Q5DT
Brand：TI
Model：CSD86356Q5DT
stock：19839
Store：ShenZhen/Hongkong
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￥4.03
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| Installation type | Surface mount |
| packing | TR,CT |
| series | NexFET™ |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-PowerTDFN |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 12W(Ta) |
| FET Type | 2 N channels(half-bridge) |
| Drain source voltage (Vdss) | 25V |
| Current at 25 ° C - continuous drain (Id) | 40A(Ta) |
| On resistance (maximum) for different Ids and Vgs | 4.5 mΩ @ 20A,5V,0.8 mΩ @ 20A,5V |
| Vgs (th) (maximum) for different Ids | 1.85V @ 250µA,1.5V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 7.9nC @ 4.5V,19.3nC @ 4.5V |
| Input capacitance at different Vds (Ciss) (maximum) | 1.04nF @ 12.5V,2.51nF @ 12.5V |
| FET function | Logic level gate,5V drive |
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